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The RN1905,LF is a dual bias resistor built-in transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors into an Ultra-Super-Mini (US6) package with six leads. The device features a collector-emitter voltage rating of 50V and a maximum collector current of 100mA. Internal bias resistors are configured as R1 at 2.2kΩ and R2 at 47kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 80 at 10mA and 5V, a transition frequency of 250MHz, and a maximum power dissipation of 200mW.
Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm availability through authorized distributors as product lifecycle status may vary. Ensure the selected variant matches the required resistance values and package specifications for the target design.
Select this component when a dual NPN configuration with fixed internal biasing is required. The integrated resistors simplify schematic design and reduce assembly steps. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the US6 package dimensions for board space constraints.
This part belongs to the RN1901 to RN1906 series of bias resistor built-in transistors. These devices share the same US6 package and general electrical structure but differ in internal resistor values. The RN1905 specifically provides a 2.2kΩ base resistor and a 47kΩ emitter resistor for its dual NPN channels.
Check for direct substitutes within the RN190x series or complementary PNP arrays like the RN290x series if polarity inversion is needed. Verify pinout compatibility and equivalent resistor ratios before substitution.