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The RN1905,LF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a US6 surface-mount package. The device features a collector-emitter voltage rating of 50V and a continuous collector current capacity of 100mA. Internal resistor values are fixed at R1 = 2.2 kΩ and R2 = 47 kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 80 at 10mA/5V, a saturation voltage maximum of 300mV at specific drive conditions, and a transition frequency of 250MHz. Total power dissipation is rated at 200mW.
Verify the complete part number including the LF(CT suffix against official distributor catalogs to ensure correct packaging configuration. Confirm RoHS compliance status directly with the manufacturer or authorized suppliers prior to procurement. Ensure storage and handling procedures adhere to the specified moisture sensitivity levels and electrostatic discharge precautions outlined in the reliability handbook.
Select this component when a dual NPN configuration with fixed bias ratios is required for space-constrained designs. The 2.2kΩ input resistor suits applications needing moderate base drive currents. Verify that the 50V collector-emitter voltage and 100mA current limits accommodate the peak operational loads. Consider thermal derating guidelines for high-temperature environments to maintain reliability within the 150°C junction temperature limit.
This device belongs to the RN1901–RN1906 family of silicon NPN epitaxial type bias resistor built-in transistors. These components utilize a P CT process technology and are designed for compact surface-mount applications. The RN1905 specifically offers distinct resistor values compared to siblings like the RN1904 or RN1906, providing tailored biasing for specific logic interface requirements.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference tools may identify parametrically similar parts, but functional equivalence must be verified against the specific R1/R2 ratios and electrical characteristics.