RN1905(T5L,F,T)

RN1905(T5L,F,T)

  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-

SKU:2dd168264c6d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

Download product information

RN1905(T5L,F,T)

Overview

The RN1905(T5L,F,T) is a Bias Resistor Built-in Transistor (BRT) containing two NPN transistors in a US6 package. It features an internal base resistor of 2.2 kΩ and an emitter-base resistor of 47 kΩ. The device supports a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. Electrical characteristics include a DC current gain of 80 at 10 mA, a transition frequency of 250 MHz, and a collector-emitter saturation voltage of 0.3 V maximum.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and manufacturing process steps by combining discrete components
  • Designed for switching, inverter, interface, and driver circuit applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging configuration and reel specifications. Ensure compliance with applicable environmental directives such as RoHS before procurement. Confirm that the requested part number matches the required electrical parameters and package dimensions for your specific application requirements.

Selection Notes

Select this component when a dual NPN BRT configuration is required within a compact surface-mount footprint. The integrated 2.2 kΩ base resistor simplifies drive circuitry compared to discrete transistor setups. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity align with the operational limits of the target system design.

Part Context

This component belongs to the RN190x series of Bias Resistor Built-in Transistors manufactured by Toshiba Semiconductor and Storage. The series includes complementary PNP variants (RN290x) and other configurations within the same US6 package family. These devices are designed to replace multiple discrete components in digital logic and signal processing applications.

Replacement Considerations

Official complementary products include the RN2905 for PNP polarity. Cross-reference with other RN190x series members if different resistor values are needed. Verify pinout compatibility and thermal performance when substituting with similar BRT packages from other manufacturers.

RN1905(T5L,F,T)RN1905(T5L,F,T)

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