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The RN1905(T5L,F,T) is a Bias Resistor Built-in Transistor (BRT) containing two NPN transistors in a US6 package. It features an internal base resistor of 2.2 kΩ and an emitter-base resistor of 47 kΩ. The device supports a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW. Electrical characteristics include a DC current gain of 80 at 10 mA, a transition frequency of 250 MHz, and a collector-emitter saturation voltage of 0.3 V maximum.
Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging configuration and reel specifications. Ensure compliance with applicable environmental directives such as RoHS before procurement. Confirm that the requested part number matches the required electrical parameters and package dimensions for your specific application requirements.
Select this component when a dual NPN BRT configuration is required within a compact surface-mount footprint. The integrated 2.2 kΩ base resistor simplifies drive circuitry compared to discrete transistor setups. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity align with the operational limits of the target system design.
This component belongs to the RN190x series of Bias Resistor Built-in Transistors manufactured by Toshiba Semiconductor and Storage. The series includes complementary PNP variants (RN290x) and other configurations within the same US6 package family. These devices are designed to replace multiple discrete components in digital logic and signal processing applications.
Official complementary products include the RN2905 for PNP polarity. Cross-reference with other RN190x series members if different resistor values are needed. Verify pinout compatibility and thermal performance when substituting with similar BRT packages from other manufacturers.