RN1906FE,LF(CT

RN1906FE,LF(CT

$0.17
  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-

SKU:f4e75c9d9485 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

Download product information

RN1906FE,LF(CT

Overview

The RN1906FE,LF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA and 5V, a transition frequency of 250MHz, and a maximum power dissipation of 200mW. The saturation voltage is specified at a maximum of 300mV under standard test conditions.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
  • Optimized for high-speed switching applications with a 250MHz transition frequency
  • Compact US6 surface-mount package suitable for space-constrained designs

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead time specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the full part number with authorized distributors to validate availability and authenticity.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for digital switching or interface tasks. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the US6 package dimensions for PCB layout compatibility and verify thermal management needs against the 200mW power dissipation limit.

Part Context

This part belongs to the RN1906 series of silicon NPN epitaxial type transistors utilizing Toshiba's PCT process. The series is designed for general-purpose small signal applications. The LF(CT) suffix indicates lead-free composition and specific tape-and-reel packaging options available from distributors.

Replacement Considerations

Compatible substitutes within the same family include RN1906AFS and RN1906FS. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official datasheets for detailed comparison of package variations and performance characteristics.

RN1906FE,LF(CTRN1906FE,LF(CT
$0.17
Buy Now