RN1906FE,LXHF(CT

Overview

The RN1906FE,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN epitaxial planar transistors with internal biasing resistors in an ES6 surface-mount package. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistors are typically 4.7kΩ for both base (R1) and emitter (R2). Key electrical parameters include a DC current gain (hFE) minimum of 30 at 10mA/5V, a saturation voltage of 300mV at 250µA/5mA, and a transition frequency of 250MHz. Power dissipation is rated at 100mW, with a maximum collector cutoff current of 500nA. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrated dual NPN configuration with built-in biasing resistors simplifies circuit design by reducing external component count.
• Automotive-grade qualification ensures reliability and compliance with stringent industry standards for vehicle electronics.
• High-speed switching capability provided by a 250MHz transition frequency suitable for digital interface applications.

Applications

• Switching circuits in automotive electronic control units
• Inverter circuits for signal processing
• Interface circuits between microcontrollers and peripheral devices
• Driver circuits for low-power loads

Procurement Notes

Verify the complete part number including the LXHF suffix to ensure lead-free compliance and specific packaging configuration. Confirm the ES6 package variant matches the PCB footprint requirements. Check for AEC-Q101 certification documentation if the application mandates automotive grade components. Ensure storage conditions align with moisture sensitivity level specifications found in the official datasheet.

Selection Notes

Select this component when a dual NPN pre-biased solution is required with 50V breakdown and 100mA current capacity. The integrated 4.7kΩ resistors suit standard logic interface applications. Consider the ES6 package dimensions for board space constraints. Verify thermal management needs against the 100mW power dissipation limit under operating conditions.

Part Context

This part belongs to the RN190x series of pre-biased transistor arrays from Toshiba. It shares the same functional architecture as variants like RN1906AFS and RN1906FS but differs in packaging and environmental compliance. The FE suffix typically denotes specific resistor values or automotive qualification within the family.

Replacement Considerations

Direct substitutes include RN1906AFS and RN1906FS from Toshiba, though package differences must be evaluated. Cross-brand equivalents require matching Vceo, Ic, hFE, and package type. Verify pin compatibility and thermal characteristics before substitution.