RN1906,LF

Overview

The RN1906,LF is a dual NPN epitaxial transistor array with built-in bias resistors in a US6 package. It features a collector-emitter voltage of 50 V and a collector current of 100 mA. The transition frequency is 250 MHz, and the maximum power dissipation is 200 mW. DC current gain is 80 at 10 mA and 5 V. Collector-emitter saturation voltage is 300 mV at 250 µA base current and 5 mA collector current. Input resistor R1 is 4.7 kΩ and R2 is 47 kΩ.

Feature Summary

• Dual NPN configuration with integrated bias resistors for simplified circuit design
• US6 ultra super mini type package for reduced manufacturing process steps
• High-speed switching capability with 250 MHz transition frequency

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through authorized Toshiba Semiconductor and Storage distributors. Confirm RoHS compliance status prior to integration. Review reliability handbook guidelines for derating under heavy loads. Ensure storage temperature range remains within specified limits during handling.

Selection Notes

Select this component for applications requiring dual NPN switching with fixed bias ratios. Verify that the 4.7 kΩ input resistor matches system requirements. Consider the US6 package dimensions for PCB layout constraints. Evaluate thermal dissipation needs against the 200 mW limit.

Part Context

Part of the RN1901 to RN1906 series offering complementary PNP options in the RN2901 to RN2906 lineup. Designed for general-purpose discrete semiconductor applications requiring compact dual-transistor solutions with pre-biased configurations.

Replacement Considerations

RN2906 serves as the complementary PNP equivalent within the same series family.