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The RN1906,LF(CT is a dual NPN pre-biased transistor array in a US6 surface-mount package. It integrates two independent NPN transistors with built-in bias resistors (R1=4.7 kΩ, R2=47 kΩ). Key electrical ratings include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 80 at IC=10mA, a transition frequency (fT) of 250 MHz, and operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for automotive qualification status if required by the application environment. Confirm availability through authorized distributors.
Select this component when a dual NPN configuration with integrated biasing is required. The RN1906 offers a resistor ratio of 0.1, suitable for applications needing specific base drive characteristics. Compare against complementary PNP models like the RN2906 for push-pull designs.
The RN1906 belongs to Toshiba's RN190x series of silicon NPN epitaxial planar transistors. This family is designed for general-purpose switching and amplification tasks. The US6 package provides a small footprint while maintaining thermal performance for dual-element integration.
Direct substitutes within the same series include RN1901 through RN1905, which share identical pinouts but differ in internal resistor values. For complementary PNP functionality, consider the RN2906 series.