RN1906,LF(CT

RN1906,LF(CT

$0.20
  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-

SKU:5828e6c865b7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN1906,LF(CT

Overview

The RN1906,LF(CT is a dual NPN pre-biased transistor array in a US6 surface-mount package. It integrates two independent NPN transistors with built-in bias resistors (R1=4.7 kΩ, R2=47 kΩ). Key electrical ratings include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 80 at IC=10mA, a transition frequency (fT) of 250 MHz, and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Integrates two NPN transistors with fixed bias resistors to simplify circuit design
  • Provides high-speed switching capability with a 250 MHz transition frequency
  • Offers compact packaging for reduced component count and manufacturing space

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for automotive qualification status if required by the application environment. Confirm availability through authorized distributors.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. The RN1906 offers a resistor ratio of 0.1, suitable for applications needing specific base drive characteristics. Compare against complementary PNP models like the RN2906 for push-pull designs.

Part Context

The RN1906 belongs to Toshiba's RN190x series of silicon NPN epitaxial planar transistors. This family is designed for general-purpose switching and amplification tasks. The US6 package provides a small footprint while maintaining thermal performance for dual-element integration.

Replacement Considerations

Direct substitutes within the same series include RN1901 through RN1905, which share identical pinouts but differ in internal resistor values. For complementary PNP functionality, consider the RN2906 series.

RN1906,LF(CTRN1906,LF(CT
$0.20
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