RN1906,LXHF(CT

Overview

The RN1906,LXHF(CT is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum power dissipation of 100 mW. The device features a transition frequency (fT) of 250 MHz and a DC current gain (hFE) minimum of 80 at 10 mA and 5 V. The base resistor (R1) is typically 4.7 kΩ, while the emitter resistor (R2) is 47 kΩ. It holds AEC-Q101 automotive qualification.

Feature Summary

• Dual NPN configuration with integrated bias resistors for simplified circuit design
• Automotive-grade reliability certified under AEC-Q101 standards
• High-speed switching capability with a 250 MHz transition frequency
• Compact ES6 surface-mount package for space-constrained applications

Applications

• Switching circuits in automotive electronic control units
• Inverter circuits for motor drive systems
• Interface circuits for signal level translation
• Driver circuits for low-power loads

Procurement Notes

Verify the complete part number including the LXHF suffix to ensure correct packaging and RoHS compliance. Confirm AEC-Q101 certification requirements if deploying in automotive environments. Check datasheet for specific thermal derating curves relative to ambient temperature. Ensure ESD handling procedures are followed during assembly due to the small signal nature of the component.

Selection Notes

Select this component when a dual NPN solution with asymmetric bias ratios is required. The 4.7 kΩ base and 47 kΩ emitter resistors provide a specific input impedance profile suitable for interface applications. Compare against RN1901 or RN1902 variants if symmetric resistor ratios or different resistance values are needed. Verify that the 100 mA current rating meets the load requirements of the target application.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which are designed to replace discrete resistor-transistor networks. The RN1906 specifically offers a dual NPN configuration with a high emitter-to-base resistance ratio. It is part of a broader family including PNP counterparts like the RN2906 and other NPN variants with different resistor values.

Replacement Considerations

Direct substitutes may include RN1906AFS or RN1906FE from Toshiba, provided pin compatibility and electrical specifications match. Cross-brand replacements require careful verification of hFE, VCEO, and package dimensions. Ensure any alternative maintains the same bias resistor ratio if circuit functionality depends on it.