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The RN1906(T5L,F,T) is a dual NPN bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two independent NPN transistors with internal bias resistors in a US6 surface-mount package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 200 mW. Internal resistors R1 and R2 are 4.7 kΩ and 47 kΩ respectively, yielding a ratio of 0.1. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC=10mA, a transition frequency (fT) of 250 MHz, and a maximum collector-emitter saturation voltage of 0.3 V.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout orientation and marking codes. Confirm RoHS compliance status directly with the supplier or through the latest datasheet revision notes before finalizing procurement specifications.
Select this component when a dual NPN configuration with asymmetric bias ratios is required for interface or driver applications. Ensure the 50 V collector-emitter rating and 100 mA current capacity align with the target load requirements. Verify that the US6 package dimensions fit the available PCB real estate constraints.
This part belongs to the RN190x series of Bias Resistor Built-in Transistors from Toshiba Semiconductor and Storage. The series includes complementary PNP variants (RN290x) and other resistor configurations within the same US6 package family, designed for general-purpose switching and logic interfacing tasks.
Direct substitutes within the same package and electrical specification should be sourced from Toshiba's RN190x series catalog. Cross-manufacturer replacements require verification of pin compatibility, hFE ranges, and internal resistor values.