RN1907FE,LF(CT

Overview

The RN1907FE,LF(CT is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It features integrated bias resistors with values of 10 kΩ and 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Power dissipation is rated at 100 mW. It operates within a temperature range of -55°C to +150°C and utilizes the ES6 surface-mount package.

Feature Summary

• Dual NPN configuration with built-in bias resistors for simplified circuit design
• High-speed operation capability up to 250 MHz transition frequency
• Compact ES6 surface-mount package suitable for space-constrained applications

Applications

• General-purpose switching circuits
• Signal amplification stages
• Logic interface buffers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging options such as cut tape or reel quantities. Ensure storage conditions align with moisture sensitivity levels to prevent degradation prior to assembly.

Selection Notes

Select this component when dual NPN switching with integrated biasing is required. Consider the 50 V breakdown voltage and 100 mA current limits against load requirements. The ES6 package dictates PCB footprint constraints. Evaluate thermal management needs given the 100 mW power dissipation rating in enclosed designs.

Part Context

This part belongs to the RN190x series of Bias Resistor Built-in Transistors (BRT). These devices integrate transistors and resistors into a single package to reduce board space and component count. The RN1907FE variant specifically offers distinct resistor values for each transistor within the dual configuration.

Replacement Considerations

RN1902FE,LF(CT is a documented substitute option. Verify pin compatibility and electrical parameter alignment before implementation.