RN1907,LF

Overview

The RN1907,LF is a pre-biased dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in base resistors of 10kΩ and 47kΩ within a single surface-mount package. The device features a collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 250MHz. Power dissipation is rated at 200mW. The component utilizes the US6 surface-mount package and includes integrated protection diodes for enhanced reliability in switching applications.

Feature Summary

• Dual NPN configuration with integrated base biasing resistors
• High-speed switching capability with 250MHz transition frequency
• Integrated protection diodes for circuit stability
• Compact surface-mount packaging for space-constrained designs

Applications

• General-purpose switching circuits
• Amplification stages in consumer electronics
• Interface driving for logic level translation
• Signal processing in industrial control systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status as indicated in official documentation. Check for obsolete status notifications from Toshiba Semiconductor and Storage prior to procurement. Ensure storage conditions meet moisture sensitivity levels specified in the datasheet to maintain device integrity during assembly processes.

Selection Notes

Select this component when dual NPN switching with integrated biasing is required to reduce external resistor count. Consider the 50V breakdown voltage and 100mA current limits for load compatibility. Evaluate the US6 package dimensions against PCB layout constraints. Compare thermal performance requirements against the 200mW power dissipation rating for adequate heat management in the target application environment.

Part Context

The RN1907,LF belongs to Toshiba's pre-biased BJT array series designed for simplified circuit design. It replaces discrete transistor and resistor combinations, reducing board space and assembly complexity. This component is part of Toshiba's broader portfolio of semiconductor devices supporting digitalization and automation across automotive, industrial, and consumer sectors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba Semiconductor and Storage technical support for verified cross-reference options. Ensure any replacement matches the electrical specifications, pin configuration, and package type to maintain circuit functionality.