RN1907,LF(CT

Overview

The RN1907,LF(CT is a dual NPN pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. The device features a collector-emitter breakdown voltage (VCEO) of 50V and a maximum DC collector current (IC) of 100mA. Typical base resistor values are specified at 47 kOhms for both Q1 and Q2. The unit operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 100mW. It utilizes the ES-6 package style for surface mount applications.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to reduce component count
• Simplifies circuit design by eliminating external biasing components
• Supports miniaturization of equipment through compact packaging

Applications

• General-purpose switching circuits
• Driver circuits for small-signal loads
• Logic interface buffering

Procurement Notes

Verify the specific ordering suffix and reel quantity requirements against the manufacturer's latest documentation before procurement. Confirm that the ES-6 package dimensions align with the target PCB footprint. Ensure compliance with RoHS standards as indicated in the product specifications. Cross-reference the part number with authorized distributors to guarantee authenticity and traceability of the semiconductor components.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. The 50V VCEO rating suits low-voltage logic applications. Consider the 100mA current limit for driving small loads. Verify thermal management capabilities given the 100mW power dissipation constraint. Compare against single-transistor alternatives if only one channel is needed to optimize board area.

Part Context

This part belongs to the RN1904 series of digital transistors from Toshiba. It shares functional similarities with other pre-biased arrays but differs in specific resistor values and package configurations. The RN1907 variant specifically targets applications requiring dual NPN switching with standardized 47kOhm bias resistors. It complements the broader portfolio of surface-mount discrete semiconductors designed for high-density electronics manufacturing.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.