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The RN1908FE(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a transition frequency (fT) of 250 MHz. The device features a typical base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 22 kΩ, resulting in a resistor ratio of approximately 2.14. Minimum DC current gain (hFE) is rated at 70. Power dissipation is specified at 100 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm lead-free compliance and tape-and-reel packaging configuration. Cross-reference the part number with authorized distributors to ensure authenticity and traceability. Confirm availability status as distribution channels may vary by region.
Select this component when a dual NPN configuration with integrated biasing is required for high-speed switching applications. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the 47 kΩ input resistance aligns with the driving source impedance and logic levels.
This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal bias networks. The FE suffix typically denotes a specific packaging variant within the TE85L family, designed for automated surface-mount assembly processes.
Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the dual NPN configuration, 50 V rating, 100 mA current, and compatible pinout to ensure functional interchangeability without circuit modification.