RN1908FE(TE85L,F)

RN1908FE(TE85L,F)

$0.26
  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-

SKU:073915317d89 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN1908FE(TE85L,F)

Overview

The RN1908FE(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a transition frequency (fT) of 250 MHz. The device features a typical base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 22 kΩ, resulting in a resistor ratio of approximately 2.14. Minimum DC current gain (hFE) is rated at 70. Power dissipation is specified at 100 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with pre-biased resistors for simplified circuit design
  • High-speed switching capability supported by a 250 MHz transition frequency
  • Compact SMD packaging suitable for space-constrained applications

Applications

  • General-purpose switching circuits
  • Logic level translation interfaces
  • Driver stages for small-signal loads

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm lead-free compliance and tape-and-reel packaging configuration. Cross-reference the part number with authorized distributors to ensure authenticity and traceability. Confirm availability status as distribution channels may vary by region.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for high-speed switching applications. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the 47 kΩ input resistance aligns with the driving source impedance and logic levels.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal bias networks. The FE suffix typically denotes a specific packaging variant within the TE85L family, designed for automated surface-mount assembly processes.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the dual NPN configuration, 50 V rating, 100 mA current, and compatible pinout to ensure functional interchangeability without circuit modification.

RN1908FE(TE85L,F)RN1908FE(TE85L,F)
$0.26
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