RN1908,LF(CT

Overview

The RN1908,LF(CT is a dual NPN pre-biased small signal transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a US6 surface-mount package (SOT-363). The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, a maximum saturation voltage of 300 mV at 250 µA base current and 5 mA collector current, and a transition frequency of 200 MHz. The total power dissipation is rated at 200 mW.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to reduce component count and simplify circuit design.
• Optimized for high-speed switching applications with a transition frequency of 200 MHz.
• Features low saturation voltage characteristics suitable for efficient digital logic interfacing.

Applications

• General-purpose switching circuits in consumer electronics.
• Driver stages for relays, solenoids, and LEDs.
• Logic level translation and buffer circuits in portable devices.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pin configuration and resistor values. Ensure the requested variant matches the required package type and electrical specifications. Cross-reference the part number with authorized distributors to confirm authenticity and compliance with current RoHS standards before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for dual NPN switching with integrated biasing is required. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the target application. Evaluate the thermal performance within the US6 package constraints if operating near maximum power dissipation limits.

Part Context

This component belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. These devices are designed to replace discrete transistor-resistor networks, saving board space and assembly time. The RN1908 specifically provides a dual NPN configuration commonly used in digital output stages and signal processing applications.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN1908,LF(CT were not identified in the provided source material. Engineers should consult official cross-reference guides or contact the manufacturer directly for verified equivalent components that match the electrical and mechanical specifications.