RN1908,LXHF(CT

Overview

The RN1908,LXHF(CT is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN silicon transistors with built-in bias resistors in a compact surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a transition frequency of 250MHz. The internal resistor configuration consists of R1=47kΩ and R2=47kΩ, providing a bias ratio of approximately 1. The component is rated for a maximum power dissipation of 100mW and complies with AEC-Q101 automotive standards.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
• Optimized for high-speed switching applications with a 250MHz transition frequency
• Automotive-grade reliability certified under AEC-Q101 standards
• Compact surface-mount packaging suitable for space-constrained designs

Applications

• Switching circuits in automotive electronic control units
• Interface connections between microcontrollers and peripheral devices
• Driver circuits for low-power loads in industrial systems
• Inverter circuits requiring compact discrete solutions

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and electrical characteristics. Confirm that the requested variant matches the required resistance values and package type. Check for RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the product documentation.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-saving designs. Verify that the 50V voltage rating and 100mA current capacity meet the application's load requirements. Consider the 250MHz transition frequency for high-speed switching needs. Compare internal resistor values (R1/R2) with circuit design specifications to ensure proper biasing without external components.

Part Context

The RN1908 belongs to Toshiba's RN series of digital transistors, which are designed to replace multiple discrete components. This series offers reduced board space and simplified assembly by integrating transistors and bias resistors into a single package. The RN1908 specifically provides a dual NPN solution, commonly used in applications requiring coordinated switching or logic inversion functions within compact form factors.

Replacement Considerations

Consult the official Toshiba replacement guide for verified equivalents. Cross-reference key parameters such as Vceo, Ic, hFE, and package dimensions before substitution. Ensure any alternative component meets AEC-Q101 requirements if used in automotive applications. Verify pin compatibility to avoid redesigning the PCB layout.