RN1908(T5L,F,T)

RN1908(T5L,F,T)

$0.26
  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-

SKU:9314c8397f24 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN1908(T5L,F,T)

Overview

The RN1908(T5L,F,T) is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN silicon transistors with built-in bias resistors in a compact surface-mount package. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, and a saturation voltage of 300 mV at 250 µA base current and 5 mA collector current. The transition frequency is specified at 250 MHz, with a maximum power dissipation of 300 mW.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
  • Optimized for high-speed switching applications with a 250 MHz transition frequency
  • Compact surface-mount packaging suitable for space-constrained designs

Applications

  • General-purpose small signal switching circuits
  • Digital logic interface buffers
  • Low-power amplifier stages

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and lead-free compliance. Ensure the ordering code matches the exact pinout and resistor values required for the target application. Cross-reference with authorized distributors to confirm current production status and availability.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Verify that the 50 V collector-emitter voltage and 100 mA current ratings exceed the maximum operating conditions of the circuit. Confirm compatibility with the SC-74/SOT-457 footprint during PCB layout.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal resistors. These devices are designed to replace multiple discrete components, thereby saving board space and assembly time in consumer electronics and industrial control systems requiring reliable switching performance.

Replacement Considerations

Check for direct equivalents such as the RN1608(TE85L,F) if package differences are acceptable. Verify pinout compatibility and resistor ratios before substituting. Consult Toshiba's official replacement guide for confirmed cross-references.

RN1908(T5L,F,T)RN1908(T5L,F,T)
$0.26
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