RN1909FE(TE85L,F)

Overview

The RN1909FE(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES-6 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation (Pd) of 200 mW. The device features a typical input resistance of 47 kOhms and a resistor ratio of 2.14. It operates within a temperature range of -55°C to +150°C and has a maximum operating frequency of 250 MHz.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to reduce component count
• Designed for high-frequency switching applications up to 250 MHz
• Utilizes compact ES-6 surface-mount packaging for space-constrained designs

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or secondary markets. Ensure that any replacement sourcing maintains compatibility with the original specifications and regulatory requirements for the intended application.

Selection Notes

Select this component for applications requiring dual NPN switching with integrated biasing. Consider the 47 kOhm input resistance and 2.14 resistor ratio for circuit matching. Verify that the 200 mW power dissipation and 50 V voltage ratings suit the operational environment and thermal constraints.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors. These devices combine bipolar junction transistors with internal resistors to simplify circuit design. The RN1909FE specifically offers dual NPN configuration in a small outline package, targeting compact electronic equipment assembly.

Replacement Considerations

No verified public substitute part numbers are available.