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The RN1909,LF(CT is a dual NPN pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10 mA and 5 V, and a transition frequency of 200 MHz. The maximum power dissipation is rated at 100 mW. The component is housed in a US6 (SOT-363) package, designed for efficient space utilization in digital switching applications.
Verify the specific suffix LF(CT against the manufacturer's latest datasheet to confirm packaging type and compliance status. Ensure the source document explicitly identifies the part as RN1909,LF(CT. Cross-reference the supplier's part number with official Toshiba Semiconductor and Storage documentation to avoid substitution errors.
Select this component when a dual NPN configuration with integrated biasing is required for high-density designs. Verify that the 100 mA collector current and 50 V breakdown voltage meet the system requirements. Confirm compatibility with the US6 footprint during PCB layout. Check if the 200 MHz transition frequency aligns with the target switching speed.
This component belongs to the RN19xx series of pre-biased transistor arrays from Toshiba. These devices are engineered to replace multiple discrete components, reducing board space and assembly complexity. The RN1909 specifically offers a dual NPN configuration, distinguishing it from single or complementary PNP/NPN variants within the same family.
Publicly confirmed substitute part numbers for RN1909,LF(CT were not found in the provided source material. Consult official Toshiba documentation or authorized distributor databases for verified equivalents.