RN1909,LF(CT

RN1909,LF(CT

$0.19
  • Description:NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
  • Series:-

SKU:5883cf747ac1 Category: Brand:

  
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Product Detailed Parameters

  • Description:NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN1909,LF(CT

Overview

The RN1909,LF(CT is a dual NPN pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10 mA and 5 V, and a transition frequency of 200 MHz. The maximum power dissipation is rated at 100 mW. The component is housed in a US6 (SOT-363) package, designed for efficient space utilization in digital switching applications.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors to simplify circuit design
  • Provides high-speed switching capability with a transition frequency of 200 MHz
  • Features a compact US6 surface-mount package for space-constrained layouts

Applications

  • Digital switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix LF(CT against the manufacturer's latest datasheet to confirm packaging type and compliance status. Ensure the source document explicitly identifies the part as RN1909,LF(CT. Cross-reference the supplier's part number with official Toshiba Semiconductor and Storage documentation to avoid substitution errors.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for high-density designs. Verify that the 100 mA collector current and 50 V breakdown voltage meet the system requirements. Confirm compatibility with the US6 footprint during PCB layout. Check if the 200 MHz transition frequency aligns with the target switching speed.

Part Context

This component belongs to the RN19xx series of pre-biased transistor arrays from Toshiba. These devices are engineered to replace multiple discrete components, reducing board space and assembly complexity. The RN1909 specifically offers a dual NPN configuration, distinguishing it from single or complementary PNP/NPN variants within the same family.

Replacement Considerations

Publicly confirmed substitute part numbers for RN1909,LF(CT were not found in the provided source material. Consult official Toshiba documentation or authorized distributor databases for verified equivalents.

RN1909,LF(CTRN1909,LF(CT
$0.19
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