RN1909(T5L,F,T)

Overview

The RN1909(T5L,F,T) is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two separate NPN bipolar junction transistors with built-in bias resistors in an ES6 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 70, a transition frequency (fT) of 250 MHz, and a power dissipation (Pd) of 100 mW. The internal bias resistor ratio is specified as 2.14.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
• Optimized for high-speed switching applications with a 250 MHz transition frequency
• Compact ES6 surface-mount package suitable for space-constrained designs

Applications

• General-purpose switching circuits
• Digital logic interface buffers
• Level shifting between different voltage domains

Procurement Notes

Verify the specific suffix (TE85L or T5L) against the required reel quantity and lead time requirements. Confirm RoHS compliance status and moisture sensitivity level before integration into production schedules. Ensure the ordering code matches the exact pinout and electrical specifications defined in the official datasheet to avoid compatibility issues.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for compact PCB layouts. The 50 V rating and 100 mA current capacity suit low-power digital switching tasks. Consider the 100 mW power dissipation limit and thermal management needs during selection. Verify that the 2.14 resistor ratio aligns with the target input impedance requirements.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine BJT arrays with internal resistors to reduce external component count. The RN1909 specifically offers a dual NPN configuration in the ES6 package, distinguishing it from single-channel or PNP variants within the same product family.

Replacement Considerations

Check for direct substitutes such as the RN1909FE(TE85L,F) if packaging variations are acceptable. Verify that any replacement maintains the 50 V VCEO, 100 mA IC, and similar hFE characteristics to ensure functional equivalence in existing designs.