RN1910FE,LF(CT

Overview

The RN1910FE,LF(CT is a dual NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US-6 (SOT-363) surface-mount package. The device features a collector-emitter voltage rating of 50V and a continuous collector current of 100mA. Each transistor includes an input resistor of 4.7kOhms. Key electrical specifications include a DC current gain (hFE) minimum of 120, a transition frequency of 250MHz, and a power dissipation of 200mW. The component operates within a temperature range up to +150°C and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Dual NPN configuration with integrated bias resistors simplifies circuit design by reducing external component count.
• Automotive-grade reliability certified under AEC-Q101 standards for enhanced durability in vehicle applications.
• Compact US-6 (SOT-363) surface-mount packaging supports space-constrained designs.

Applications

• Switching circuits in automotive electronic control units
• Inverter circuits for motor drive systems
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific suffix LF(CT against the official Toshiba datasheet to confirm lead-free compliance and tape-and-reel packaging details. Ensure the ordering code matches the required quantity per reel. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability and authenticity before placing orders.

Selection Notes

Select this component when a dual NPN digital transistor solution is required for high-speed switching applications. The 4.7kOhm internal resistor value suits standard logic interface levels. Consider the 250MHz transition frequency for signal integrity requirements. Verify that the 50V VCEO rating exceeds the maximum operating voltage of the target circuit to ensure safe operation margins.

Part Context

This part belongs to Toshiba's RN19xx series of pre-biased transistors designed for automotive and industrial use. It complements other variants in the family such as the RN1904 and RN1910, offering consistent performance characteristics across different resistor configurations while maintaining automotive qualification standards.

Replacement Considerations

Direct substitutes may include other dual NPN digital transistors in SOT-363 packages with similar VCEO and IC ratings. Verify pinout compatibility and internal resistor values before substitution. Check if alternative parts meet AEC-Q101 requirements if automotive qualification is mandatory for the application.