RN1910FE,LXHF(CT

RN1910FE,LXHF(CT

$0.34
  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-

SKU:daecef63ddae Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN1910FE,LXHF(CT

Overview

The RN1910FE,LXHF(CT is a pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage, designed for automotive applications under the AEC-Q101 qualification standard. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a typical base resistor (R1) value of 4.7 kΩ and an emitter resistor (R2) of 4.7 kΩ, providing a resistor ratio of 1. It operates within a maximum junction temperature of 150°C and has a power dissipation rating of 200 mW.

Feature Summary

  • Integrated dual-resistor network simplifies circuit design by reducing component count and board space.
  • Automotive-grade reliability certified to AEC-Q101 standards for harsh environment operation.
  • Symmetrical resistor configuration facilitates balanced switching characteristics in push-pull or complementary configurations.

Applications

  • Automotive logic level shifting and signal buffering
  • Driver circuits for automotive sensors and actuators
  • General-purpose switching in automotive control modules

Procurement Notes

Verify the specific suffix LXHF(CT) against the manufacturer's latest datasheet to confirm packaging type and tape-and-reel specifications. Ensure the order quantity aligns with the minimum reel size defined by Toshiba Semiconductor and Storage. Cross-reference the AEC-Q101 certification status with the current product lifecycle status to guarantee long-term availability for automotive production lines.

Selection Notes

Select this component when a single SOT-363 package solution is required for driving low-current loads with symmetrical biasing. Compare the 4.7 kΩ internal resistance values against system drive requirements to ensure adequate base current. Consider the 200 mW power dissipation limit relative to ambient temperature derating curves if operating in enclosed automotive enclosures.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, specifically tailored for automotive electronics. The FE suffix typically denotes a specific internal resistor tolerance or variant within the LXHF family. It complements other devices like the RN1902 and RN2103 in Toshiba's automotive digital transistor portfolio, offering standardized solutions for embedded control systems.

Replacement Considerations

Direct substitutes may include the RN1902,LXHF(CT for similar NPN configurations, though resistor values differ. Verify pinout compatibility with SOT-363/US6 packages before substitution. Alternative manufacturers such as onsemi or Rohm offer comparable AEC-Q101 qualified digital transistors, but electrical parameters must be matched precisely.

RN1910FE,LXHF(CTRN1910FE,LXHF(CT
$0.34
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