RN1910FE(T5L,F,T)

Overview

The RN1910FE(T5L,F,T) is a pre-biased NPN digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US6 surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50V, a maximum continuous collector current of 100mA, and a transition frequency of 250MHz. The device features an internal base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 1 kΩ. With a maximum power dissipation of 200mW and a DC current gain (hFE) of at least 30 at 10mA/5V, it is designed for efficient switching applications requiring minimal external components.

Feature Summary

• Integrates dual NPN transistors with fixed bias resistors to simplify circuit design
• Provides high-speed switching capability with a 250MHz transition frequency
• Offers low saturation voltage for improved efficiency in logic interfacing
• Utilizes a compact US6 surface-mount package for space-constrained layouts

Applications

• Logic level shifting between different voltage domains
• Driver circuits for small-signal switching loads
• Interface buffers for microcontroller GPIO expansion
• Pull-up/pull-down replacement in digital logic circuits

Procurement Notes

Verify the specific suffix T5L,F,T against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free compliance. Ensure the ordering part number matches the exact resistance values and package type required for your design. Cross-reference with authorized distributors to confirm current availability and authenticity before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce board space and assembly time. Compare the 4.7kΩ base resistor value against your drive source capabilities to ensure adequate base current. Verify that the 50V Vceo rating exceeds your maximum operating voltage and that the 100mA Ic limit accommodates your load requirements without exceeding thermal constraints.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which are designed to replace discrete resistor-transistor networks. The RN1910 variant specifically provides two NPN channels in a single package. It is functionally related to other RN19xx series parts but differs in internal resistor configurations and channel counts. The FE suffix typically denotes a specific packaging or quality grade variation within the standard RN1901 family.

Replacement Considerations

Direct substitutes may include the RN1901LF(CT) if the internal resistor values and pinout are compatible. Verify that any alternative maintains the same US6 package dimensions and electrical characteristics. Check for equivalent hFE ranges and Vce(sat) specifications to ensure performance parity in the target application.