RN1910,LF(CT

Overview

The RN1910,LF(CT is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US6 surface-mount package. The device features a collector-emitter voltage (VCEO) of 50V and a maximum DC collector current (IC) of 100mA. With a power dissipation rating of 100mW and a transition frequency of 250MHz, it supports high-speed switching applications. The typical input resistance is specified at 47kOhms for both base circuits, ensuring stable operation within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with pre-biased internal resistors for simplified circuit design
• Optimized for high-speed switching operations with a 250MHz transition frequency
• Compact US6 surface-mount package facilitates space-constrained PCB layouts

Applications

• Switching circuits requiring compact dual-transistor solutions
• Inverter circuits for signal processing
• Interface circuits for digital logic level shifting
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix 'LF(CT' against the manufacturer's official ordering information to confirm packaging configuration and lead time requirements. Ensure compatibility with RoHS standards if required by the target application. Cross-reference the part number with Toshiba Semiconductor and Storage documentation to validate availability and manufacturing status before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. The 50V VCEO and 100mA IC ratings suit low-to-medium power switching tasks. Consider the US6 package dimensions for footprint constraints. Verify that the 100mW power dissipation limit aligns with the thermal management capabilities of the intended system environment.

Part Context

The RN1910 belongs to Toshiba's series of pre-biased transistors designed to replace discrete resistor-transistor networks. These devices simplify design processes by combining active and passive elements into a single package. The RN1910 specifically targets applications needing dual NPN functionality with fixed biasing, offering a reliable alternative to traditional discrete BJT arrangements in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba Semiconductor and Storage technical support or authorized distributors for verified cross-reference data. Ensure any replacement matches the US6 package, 50V/100mA ratings, and dual NPN configuration.