RN1911FE,LF(CT

Overview

The RN1911FE,LF(CT is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN epitaxial silicon transistor with built-in bias resistors in a compact surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a minimum DC current gain (hFE) of 70 at Ic=10mA and Vce=5V. Internal resistor values consist of R1 at 4.7 kΩ and R2 at 10 kΩ. The saturation voltage (Vce(sat)) is specified as 300 mV maximum at Ib=250µA and Ic=5mA. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 100 mW.

Feature Summary

• Integrates NPN transistor with dual bias resistors for simplified circuit design
• Provides high current gain and low saturation voltage for efficient switching
• Offers superior thermal stability and reliability through epitaxial PCT process

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix LF(CT against the official Toshiba datasheet to confirm lead-free status and tape-and-reel packaging configuration. Ensure the ordering code matches the required quantity per reel and terminal finish specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. Verify that the 50V Vceo and 100mA Ic ratings exceed the application's peak operating conditions. Confirm compatibility with the target PCB footprint, typically US6 or ES6 packages, during the layout phase.

Part Context

This part belongs to Toshiba’s RN series of pre-biased transistors, designed to replace discrete resistor-transistor networks. The FE suffix typically denotes a specific packaging variant, while LF indicates compliance with lead-free environmental standards. These devices streamline manufacturing by reducing component count and assembly steps.

Replacement Considerations

Direct substitutes may include other manufacturers' NPN pre-biased transistors with matching 50V/100mA ratings and similar internal resistor ratios (R1:R2 ≈ 1:2.1). Verify pinout compatibility and thermal characteristics before substitution.