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The RN1911FE,LXHF(CT is a digital transistor array manufactured by Toshiba Semiconductor and Storage, featuring two PNP transistors with built-in bias resistors. It is designed for surface-mount applications in the ES6 package (SOT-563/SOT-666). Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device incorporates internal base and emitter resistors, each with a typical value of 4.7 kΩ. It supports a transition frequency of 250MHz and has a maximum power dissipation of 100mW. The component is qualified to AEC-Q101 standards for automotive reliability.
Verify the complete part number including the suffix FE,LXHF(CT to ensure correct packaging and compliance status. Confirm that the supplier provides official documentation from Toshiba Semiconductor and Storage. Check for AEC-Q101 certification records if automotive application is required. Ensure the ES6 package footprint matches the design board layout constraints.
Select this component when a dual PNP digital transistor solution is needed for space-constrained designs. The 50V rating and 100mA current capacity suit low-power switching tasks. Compare internal resistor values against specific bias requirements. Consider the ES6 package dimensions relative to available board space. Verify thermal management needs given the 100mW power dissipation limit.
This part belongs to the RN19xx series of pre-biased transistor arrays from Toshiba. It complements other variants like the RN1901 (NPN) and RN1904 (NPN) within the same family. The series offers standardized internal resistance configurations to streamline interface design across various consumer and industrial electronics platforms.
Direct substitutes may include other dual PNP digital transistors in SOT-563 packages from manufacturers like ROHM or ON Semiconductor. Verify pinout compatibility and internal resistor tolerance before substitution. Ensure voltage and current ratings meet or exceed original specifications.