RN1911FETE85LF

Description：TRANS 2NPN PREBIAS 0.1W ES6
Series：-

SKU:c3aa43f235b5 Category: Bipolar Transistor Arrays, Pre-Biased Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN PREBIAS 0.1W ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Resistor - Base (R1)：10kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：250MHz
Power - Max：100mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6

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RN1911FETE85LF

Overview

The RN1911FETE85LF is a digital transistor manufactured by Toshiba Semiconductor and Storage, featuring a single NPN configuration with built-in bias resistors. It operates within a collector-emitter voltage range of -50 V to 50 V and supports a continuous collector current of up to 100 mA. The device includes a typical input resistor of 4.7 kOhms with a resistor ratio of 1. Packaged in the compact SSM-3 surface-mount format, it offers a power dissipation capacity of 100 mW and functions reliably across an extended temperature range from -55°C to +150°C.

Feature Summary

Integrates NPN bipolar junction transistor with pre-biased resistors for simplified circuit design
Utilizes small SSM-3 surface-mount package for high-density mounting applications
Provides stable switching performance with defined DC current gain characteristics

Applications

General-purpose signal switching in consumer electronics
Driver circuits for low-power loads requiring integrated biasing
Logic level translation interfaces in embedded systems

Procurement Notes

Verify the complete part number including the TE85L suffix to ensure correct packaging and lead-free compliance. Confirm RoHS status through official Toshiba documentation prior to integration. Check for specific distributor lot codes if traceability is required for your manufacturing process.

Selection Notes

Select this component when a single NPN digital transistor with 4.7 kOhm base resistance is needed. Ensure the 100 mA collector current and 50 V voltage ratings exceed your circuit requirements. Consider the SSM-3 footprint constraints during PCB layout planning.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which combine BJTs with internal bias networks. The RN1911 variant specifically provides NPN polarity with a standard 4.7 kOhm input resistor, distinguishing it from other variants that may offer different resistor values or PNP configurations.