RN1911,LF(CT

Overview

The RN1911,LF(CT is a dual pre-biased NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors within a compact US6 surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Key electrical specifications include a DC current gain (hFE) minimum of 30 at 10mA and 5V, and a saturation voltage of 300mV maximum at 250µA base current and 5mA collector current. The transition frequency is rated at 250MHz, with a maximum power dissipation of 200mW.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to simplify circuit design
• Provides high-speed switching capability with a 250MHz transition frequency
• Offers low saturation voltage for efficient signal processing
• Utilizes a compact US6 surface-mount package for space-constrained applications

Applications

• Switching circuits requiring simplified bias networks
• Inverter circuits for digital logic interfaces
• Driver circuits for low-power loads
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity requirements against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and moisture sensitivity level classifications relevant to your assembly process. Ensure that the US6 package dimensions align with your PCB footprint design rules. Cross-reference the part number with authorized distributors to confirm current availability and lead times.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce board space and component count. Compare the 250MHz transition frequency against application speed requirements. Evaluate the 200mW power dissipation limit against thermal management constraints in the US6 package. Consider the 50V breakdown voltage relative to the operating voltage levels of the target circuit.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine BJT arrays with internal resistors. These components are designed to replace discrete resistor-transistor combinations, thereby reducing assembly complexity and improving reliability. The RN1911 specifically provides a dual NPN solution, complementing other variants like the RN1901 or RN1904 which may offer different resistance values or transistor configurations.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN1911,LF(CT were not identified in the provided source material. Verify compatibility with alternative dual NPN pre-biased transistors from other manufacturers based on pinout, electrical parameters, and package dimensions.