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The RN1911,LXHF(CT is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50V, a maximum continuous collector current of 100mA, and a transition frequency of 250MHz. The device features a typical base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 4.7 kOhms. It has a maximum power dissipation of 100mW and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix LXHF(CT against the manufacturer's official datasheet to confirm RoHS compliance and tape-and-reel packaging details. Ensure the ordering part number matches the exact pinout and resistance values specified in the RN1911 series documentation before procurement.
Select this component when a dual NPN configuration with integrated biasing is required for automotive or industrial switching applications. Compare the 4.7kOhm internal resistor values against system requirements. Verify that the 100mA collector current and 50V voltage ratings exceed the maximum load conditions of the target application.
This component belongs to the RN19xx series of pre-biased transistor arrays from Toshiba. These devices are designed to replace multiple discrete components, reducing board space and assembly complexity. The RN1911 specifically provides a dual NPN solution, complementing other variants like the RN1901 (dual NPN) and RN4901 (NPN/PNP pair).
Check for direct cross-reference part numbers from distributors such as DDTC144GE-7-F or DTC144TET1G if availability is constrained. Ensure any substitute maintains the same dual NPN configuration, 50V rating, and ES6-compatible footprint.