RN1911(T5L,F,T)

RN1911(T5L,F,T)

  • Description:TRANS 2NPN PREBIAS 0.1W US6
  • Series:-

SKU:111a2a103c2e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN1911(T5L,F,T)

Overview

The RN1911(T5L,F,T) is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package, specifically the US6 (SC-88/SOT-363) configuration. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal resistor values are typically 4.7 kΩ for R1 and 1 kΩ for R2. Designed for high-speed switching applications, it offers a transition frequency of 250MHz and low power dissipation characteristics suitable for portable electronics.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce external component count
  • Compact US6 surface-mount package optimized for space-constrained designs
  • High-speed switching capability with 250MHz transition frequency
  • Low saturation voltage for efficient power management

Applications

  • Switching circuits in mobile phones and handheld devices
  • Interface driver circuits for digital logic levels
  • Inverter circuits in consumer electronics
  • General-purpose switching applications in portable equipment

Procurement Notes

Verify the exact ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Toshiba sales representatives prior to procurement. Ensure storage conditions meet moisture sensitivity level requirements for surface-mount devices.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to simplify circuit layout. Compare internal resistor ratios against application requirements to ensure proper base drive. Consider the US6 package dimensions for PCB space constraints. Verify thermal performance under maximum load conditions to ensure operation within junction temperature limits.

Part Context

The RN1911 belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal bias networks. This series is designed to replace multiple discrete components, reducing assembly costs and improving reliability in high-volume consumer and industrial applications. The T5L,F,T suffix indicates specific packaging and environmental compliance attributes defined by Toshiba.

Replacement Considerations

Check for direct pin-compatible alternatives from Toshiba or other manufacturers offering similar dual NPN pre-biased configurations in SOT-363 packages. Verify electrical parameter equivalence, particularly Vceo, Ic, and internal resistor values, before substitution.

RN1911(T5L,F,T)RN1911(T5L,F,T)

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