RN1961FE(TE85L,F)

RN1961FE(TE85L,F)

  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-

SKU:b68b7c41828e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN1961FE(TE85L,F)

Overview

The RN1961FE(TE85L,F) is a dual NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with bias resistors into an Extreme-Super-Mini package, reducing component count and assembly costs. Key electrical parameters include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 100 mW. The device features typical input resistors R1 and R2 both rated at 4.7 kΩ. It operates within a junction temperature range up to 150°C and supports transition frequencies up to 250 MHz.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors in a single compact package to reduce parts count.
  • Designed for switching, inverter, interface, and driver circuit applications.
  • Complementary to the RN2961FE through RN2966FE PNP series.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's latest documentation to confirm packaging details such as reel quantity or tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the component status aligns with long-term supply requirements, as availability may vary.

Selection Notes

Select this component when a dual NPN configuration with equal 4.7 kΩ bias resistors is required. It serves as a direct replacement for discrete resistor-transistor networks in space-constrained designs. Consider the complementary RN2961FE if a PNP equivalent is needed. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the specific load requirements of the target application.

Part Context

This part belongs to the RN1961FE-RN1966FE family of BRTs from Toshiba. These devices share the same physical package and general electrical characteristics but differ in internal resistor values. The RN1961FE specifically utilizes identical 4.7 kΩ resistors for both channels, distinguishing it from variants like the RN1963FE which uses 22 kΩ resistors.

Replacement Considerations

Publicly confirmed substitutes are not explicitly listed in the provided datasheet. Designers should evaluate other BRTs with matching 50 V, 100 mA, and 4.7 kΩ/4.7 kΩ resistor ratios from alternative manufacturers, ensuring pinout compatibility with the SOT-563 package.

RN1961FE(TE85L,F)RN1961FE(TE85L,F)

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