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The RN1961(TE85L,F) is a pre-biased NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with an internal base resistor network within a compact USM-6 (ESV-6) surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. With a maximum power dissipation of 200 mW, it supports operation across a temperature range from -55°C to +150°C. The component utilizes Silicon technology and offers a minimum DC current gain (hFE) of 80, designed for efficient switching applications in space-constrained electronic circuits.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure that the requested quantity aligns with standard reel sizes or cut-tape availability. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when a compact solution combining amplification and biasing is required. The integrated resistor network reduces external component count compared to discrete configurations. Evaluate thermal management requirements given the 200 mW dissipation limit and ensure the operating environment remains within the specified -55°C to +150°C range for reliable long-term function.
This part belongs to Toshiba's RN series of pre-biased transistors, which are engineered to replace multiple discrete components. The RN1961 specifically targets applications needing NPN switching with fixed bias characteristics. Its design simplifies PCB routing by eliminating external base resistors while maintaining consistent electrical performance across production batches.
Consult official Toshiba substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter alignment before replacing.