RN1962FE(TE85L,F)

RN1962FE(TE85L,F)

$0.15
  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-

SKU:3de4d9502fe5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN1962FE(TE85L,F)

Overview

The RN1962FE(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) containing two NPN silicon epitaxial transistors in an Extreme-Super-Mini package. It features a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 100 mW. The integrated bias resistors are both 10 kΩ with a ratio of 1.0. Key electrical parameters include a DC current gain minimum of 50 at 10 mA, saturation voltage of 0.3 V max, transition frequency of 250 MHz, and input resistor tolerance of ±10%.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce component count and assembly costs.
  • Utilizes an Extreme-Super-Mini 6-pin surface mount package for compact equipment design.
  • Provides complementary functionality within the RN196x/ RN296x series.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm packaging details such as reel quantity or tape specifications. Confirm RoHS compliance status directly with Toshiba Semiconductor and Storage prior to procurement. Ensure the component meets all environmental regulations applicable to the target market.

Selection Notes

Select this component when a dual NPN configuration with equal 10 kΩ bias resistors is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with the circuit load requirements. Consider the 250 MHz transition frequency for high-speed switching applications compared to lower-frequency alternatives.

Part Context

This device belongs to the RN1961FE through RN1966FE family of BRTs manufactured by Toshiba Semiconductor and Storage. These components share the same physical package and general electrical limits but differ in internal resistor values. The RN1962FE specifically provides symmetric 10 kΩ resistors for balanced biasing needs.

Replacement Considerations

RN1961FE, RN1963FE, RN1964FE, RN1965FE, RN1966FE. Substitutes require verification of matching resistor values and ratios. Complementary PNP equivalents are available in the RN2961FE to RN2966FE series.

RN1962FE(TE85L,F)RN1962FE(TE85L,F)
$0.15
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