RN1963FE(TE85L,F)

Overview

The RN1963FE(TE85L,F) is a dual NPN Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with bias resistors into an Extreme-Super-Mini package. The device features a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 100 mW. Each transistor includes a base resistor (R1) of 22 kΩ and an emitter resistor (R2) of 22 kΩ. The DC current gain (hFE) has a minimum value of 70 at IC = 10 mA.

Feature Summary

• Dual NPN configuration with integrated bias resistors to reduce component count
• Compact packaging designed for space-constrained circuit designs
• High transition frequency suitable for switching applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm reel specifications and tape-and-reel dimensions. Confirm RoHS compliance status directly with the supplier or through official environmental reports before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN BRT with equal 22 kΩ bias resistors is required. Ensure the design operates within the 100 mA collector current limit and 100 mW power dissipation rating. Verify that the 50 V collector-emitter voltage meets the circuit requirements.

Part Context

This part belongs to the RN1961FE to RN1966FE series of NPN epitaxial planar transistors. These devices utilize Toshiba's PCT process technology. The series offers various resistor combinations to suit different interface and driver requirements while maintaining a standardized footprint.

Replacement Considerations

The datasheet notes that the RN1961FE to RN1966FE series are complementary to the RN2961FE to RN2966FE series. No other direct substitute part numbers are explicitly listed in the provided documentation.