RN1963(TE85L,F)

Overview

The RN1963(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage, housed in a US-6 surface-mount package. It features a typical input resistance of 22 kOhms with a resistor ratio of 1. The device supports a maximum operating frequency of 250 MHz and offers a minimum DC collector/base gain (hFE) of 70. Electrical limits include a collector-emitter voltage (VCEO) of 50 V, an emitter-base voltage (VEBO) of 10 V, and continuous/peak collector currents of 100 mA. Power dissipation is rated at 200 mW, with an operational temperature range spanning from -55°C to +150°C.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors into a compact US-6 package to reduce component count.
• Supports high-frequency switching applications with a maximum operating frequency of 250 MHz.
• Provides enhanced thermal stability with a maximum junction temperature rating of 150°C.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the complete part number including the TE85L suffix when sourcing, as it denotes specific tape-and-reel packaging configurations. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device reliability during assembly processes.

Selection Notes

Select this component for designs requiring dual NPN switching with integrated base biasing in space-constrained layouts. The 22 kOhm input resistance suits standard logic interface levels. Verify that the 200 mW power dissipation limit accommodates the thermal environment of the target application without exceeding the 150°C junction temperature threshold.

Part Context

This component belongs to Toshiba's RN series of bias resistor-built-in transistors. These devices combine bipolar junction transistors with internal resistive networks to simplify circuit design. The US-6 package provides a small footprint suitable for portable electronics and dense printed circuit board layouts requiring multiple switching elements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other dual NPN digital transistors in the US-6 package only after verifying pin compatibility and electrical parameter alignment with official datasheets.