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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.1W ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN1964FE(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors into an Extreme-Super-Mini package with a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 100 mW. The device features a typical DC current gain (hFE) of 80 at IC = 10 mA and a transition frequency of 250 MHz. Each internal transistor includes a bias resistor network with R1 and R2 both set to 47 kΩ.
Feature Summary
- Integrates two NPN transistors with built-in bias resistors in a single compact package to reduce component count.
- Designed for switching, inverter, interface, and driver circuit applications.
- Complementary devices available within the same series.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific manufacturer part number against official Toshiba documentation before procurement. Confirm that the TE85L,F suffix corresponds to the required tape and reel packaging format. Ensure compliance with RoHS directives and check for any end-of-life notices or reliability warnings specified in the product datasheet.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. The 47 kΩ resistor values are suitable for standard logic interface levels. Verify that the 50 V collector-emitter voltage rating meets the maximum operating voltage requirements of the target application circuit.
Part Context
This component belongs to the RN1961FE through RN1966FE series of Silicon NPN Epitaxial Type Bias Resistor Built-in Transistors. All members of this family share the same physical package and general electrical characteristics but differ in their internal bias resistor configurations.
Replacement Considerations
RN1963FE(TE85L,F)
FAQ
What are the resistance values for the built-in bias resistors?
For the RN1964FE, both the base resistor (R1) and emitter resistor (R2) have a nominal value of 47 kΩ.
What is the maximum collector-emitter voltage rating?
The absolute maximum collector-emitter voltage (VCEO) for the RN1964FE is 50 V.
Is this device suitable for high-frequency applications?
Yes, the device has a transition frequency (fT) of 250 MHz, making it suitable for various switching and interface applications.
