RN1965FE(TE85L,F)

Overview

The RN1965FE(TE85L,F) is a dual NPN epitaxial silicon bias resistor built-in transistor housed in an Extreme-Super-Mini (ES-6) package. It integrates two transistors with specific bias resistors to reduce component count and assembly costs. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 100 mW. The device features a transition frequency of 250 MHz and a DC current gain minimum of 80. Resistor values are R1 = 2.2 kΩ and R2 = 47 kΩ.

Feature Summary

• Incorporates two NPN transistors into a compact six-pin package to minimize parts count and save assembly cost.
• Integrates internal bias resistors to simplify circuit design for switching, inverter, interface, and driver applications.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the exact ordering code against the manufacturer's official documentation before purchase. Confirm that the TE85L suffix corresponds to the required tape and reel packaging format. Ensure compliance with environmental directives such as RoHS if applicable to the target market. Review the reliability handbook for derating guidelines under heavy loads or high temperatures.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Compare the 2.2 kΩ input resistor value against other models in the RN196x series to ensure proper logic level compatibility. Verify that the 100 mW power dissipation rating meets the thermal requirements of the specific application environment.

Part Context

This part belongs to the RN1961FE through RN1966FE family of bias resistor built-in transistors. All members share the same ES-6 package and core transistor characteristics but differ in their internal resistor ratios. The RN1965FE specifically pairs a low input resistance with a high feedback resistance.

Replacement Considerations

RN1963FE, RN1964FE, RN1966FE within the same Toshiba series offer identical packages and ratings but different resistor values. Cross-reference the specific R1 and R2 values required by the circuit design before substituting.