RN1965(TE85L,F)

RN1965(TE85L,F)

$0.32
  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-

SKU:ed3a5dd59bf5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN1965(TE85L,F)

Overview

The RN1965(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US-6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 200 mW. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 80. It operates within a temperature range of -55°C to +150°C and supports a maximum operating frequency of 250 MHz.

Feature Summary

  • Integrates dual NPN transistors with pre-bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 250 MHz operating frequency
  • Designed for low-power consumption with a 200 mW power dissipation rating

Applications

  • Switching circuits in portable electronic devices
  • Driver circuits for logic interfaces
  • Inverter circuits requiring compact component footprints

Procurement Notes

Verify the specific ordering suffix TE85L,F to ensure correct packaging configuration, as it indicates tape and reel quantities. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Cross-reference the manufacturer part number with distributor codes to avoid sourcing errors during procurement.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce board space. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the US-6 package dimensions are compatible with the target PCB layout constraints.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal resistor networks. The TE85L,F suffix denotes the specific taping and environmental compliance attributes defined by the manufacturer for automated assembly processes.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the NPN polarity, 50 V rating, 100 mA current, and US-6 package footprint to maintain circuit functionality.

RN1965(TE85L,F)RN1965(TE85L,F)
$0.32
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