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The RN1965(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact US-6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 200 mW. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 80. It operates within a temperature range of -55°C to +150°C and supports a maximum operating frequency of 250 MHz.
Verify the specific ordering suffix TE85L,F to ensure correct packaging configuration, as it indicates tape and reel quantities. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Cross-reference the manufacturer part number with distributor codes to avoid sourcing errors during procurement.
Select this component when a dual NPN configuration with integrated biasing is required to reduce board space. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the US-6 package dimensions are compatible with the target PCB layout constraints.
This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with internal resistor networks. The TE85L,F suffix denotes the specific taping and environmental compliance attributes defined by the manufacturer for automated assembly processes.
Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the NPN polarity, 50 V rating, 100 mA current, and US-6 package footprint to maintain circuit functionality.