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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.1W ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN1966FE(TE85L,F) is a dual NPN bias resistor built-in transistor (BRT) from Toshiba Semiconductor and Storage. It integrates two transistors with specific bias resistors into an Extreme-Super-Mini package. The device features a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 100 mW. The internal resistors are configured as R1 = 4.7 kΩ and R2 = 47 kΩ. It has a minimum DC current gain of 80 and a transition frequency of 250 MHz.
Feature Summary
- Integrates two NPN transistors with bias resistors in a compact six-pin package to reduce component count.
- Designed for switching, inverter, interface, and driver circuit applications.
- Complementary to the RN2961FE through RN2966FE PNP series.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the manufacturer part number against official Toshiba documentation to ensure authenticity. Confirm that the TE85L,F suffix corresponds to the required tape and reel packaging format. Check for RoHS compliance status and environmental declarations prior to ordering. Ensure design reliability by reviewing the Toshiba Semiconductor Reliability Handbook for derating guidelines.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required. The RN1966FE offers a 4.7 kΩ base resistor and a 47 kΩ emitter resistor. It serves as the NPN counterpart to the RN2966FE PNP device. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the application requirements.
Part Context
This component belongs to the RN1961FE through RN1966FE family of dual NPN BRTs. All members share identical electrical characteristics but differ in their internal resistor values. The RN1966FE specifically utilizes a 4.7 kΩ input resistor and a 47 kΩ output resistor within its dual-transistor structure.
Replacement Considerations
The RN2966FE(TE85L,F) is the complementary PNP equivalent within the same product family. Other RN196xFE variants may be considered if different resistor ratios are acceptable. No direct cross-manufacturer substitutes are confirmed in the provided datasheet.
FAQ
What are the specific values of the internal bias resistors?
The RN1966FE contains an input resistor (R1) of 4.7 kΩ and an output resistor (R2) of 47 kΩ.
Is this device compatible with the RN2966FE?
Yes, the RN1966FE is the NPN complementary device to the RN2966FE PNP transistor.
What is the maximum collector-emitter voltage rating?
The absolute maximum rating for collector-emitter voltage (VCEO) is 50 V.
