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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.1W ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN1967FE(TE85L,F) is a dual NPN epitaxial silicon bias resistor built-in transistor (BRT) from Toshiba Semiconductor and Storage. It integrates two transistors with internal bias resistors into an Extreme-Super-Mini package. Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 100 mW. The device features a typical transition frequency of 250 MHz and a DC current gain (hFE) minimum of 80 at 10 mA. Internal resistor values are R1 = 10 kΩ and R2 = 47 kΩ.
Feature Summary
- Integrates two NPN transistors with built-in bias resistors to reduce component count and assembly costs.
- Utilizes an Extreme-Super-Mini 6-pin package for compact equipment manufacturing.
- Designed for switching, inverter, interface, and driver circuit applications.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against the manufacturer's latest documentation to confirm packaging details and environmental compliance status. Ensure that design margins account for the absolute maximum ratings provided in the datasheet, particularly regarding junction temperature and power dissipation limits under varying thermal conditions.
Selection Notes
Select this component when a dual NPN configuration with fixed bias ratios is required. The RN1967FE offers a specific resistor ratio of approximately 0.213 (R1/R2). Compare against complementary PNP models like the RN2967FE if a full complementary pair is needed for push-pull or differential stages within the same package footprint.
Part Context
This part belongs to the RN1967FE~RN1969FE series, which shares the same physical package and general electrical characteristics but differs in internal resistor values. The series utilizes Toshiba's PCT process technology for silicon NPN epitaxial transistors, ensuring consistent performance across the family while allowing customization of input impedance through the integrated resistors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official cross-reference lists or contact the manufacturer directly for verified alternatives.
