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The RN1968(TE85L,F) is a dual NPN Bias Resistor Built-in Transistor (BRBT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal bias resistors in a compact US-6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a power dissipation rating of 200mW. The device features a typical input resistance of 22 kOhms, a minimum DC current gain (hFE) of 70, and a transition frequency of 250MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging type and lead time requirements. Ensure compatibility with RoHS directives and check moisture sensitivity levels before assembly. Confirm availability through authorized distributors as standard delivery periods may vary.
Select this component when a dual NPN configuration with integrated biasing is required for logic interfacing or signal switching. The 22kOhm input resistor value suits direct connection to standard logic outputs without additional base drive components. Consider the 200mW power dissipation limit and thermal management needs for the US-6 package in dense PCB layouts.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors, which are designed to simplify circuit design by replacing discrete transistor and resistor networks. The RN1968 specifically offers dual NPN channels, making it suitable for differential pairs or complementary switching tasks where space savings and reduced assembly costs are priorities.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters such as VCEO, IC, and R1 values before considering alternative BRBT models from other manufacturers.