RN1970FE(TE85L,F)

RN1970FE(TE85L,F)

$0.29
  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-

SKU:378e37b3d7fd Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

Download product information

RN1970FE(TE85L,F)

Overview

The RN1970FE(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into an Extreme-Super-Mini 6-pin package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total collector power dissipation (PC) of 100 mW. The device features a minimum DC current gain (hFE) of 120 at IC = 1 mA and a transition frequency (fT) of 250 MHz. The input resistor (R1) for the RN1970FE variant has a typical value of 4.7 kΩ.

Feature Summary

  • Integrates two NPN transistors with bias resistors in a single compact package to reduce component count.
  • Designed for switching, inverter, interface, and driver circuit applications.
  • Complementary configuration available with PNP variants.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's latest documentation to confirm packaging type and lead time requirements. Ensure the ordering quantity aligns with standard reel or cut tape specifications provided by authorized distributors. Cross-reference the part number with official Toshiba Semiconductor and Storage catalogs to validate availability and compliance status before finalizing procurement orders.

Selection Notes

Select the RN1970FE when a dual NPN digital transistor with a typical 4.7 kΩ base resistor is required. Compare the 100 mW power dissipation limit against thermal constraints in the target application. Verify that the 50 V voltage rating exceeds the maximum operating voltage. Consider the complementary RN2970FE if PNP logic compatibility is needed within the same system design.

Part Context

This component belongs to the RN1970/RN1971 series of Bias Resistor Built-In Transistors (BRBTs). These devices utilize Toshiba's PCT process technology to provide high-speed switching capabilities in a small footprint. The series is designed to simplify circuit design by eliminating external base resistors, thereby reducing board space and assembly costs compared to discrete transistor solutions.

Replacement Considerations

The datasheet identifies the RN2970FE as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material. Verify pinout compatibility and electrical characteristics before considering alternative manufacturers' components.

RN1970FE(TE85L,F)RN1970FE(TE85L,F)
$0.29
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