RN1970(TE85L,F)

Overview

The RN1970(TE85L,F) is a Bias Resistor Built-in Transistor (BRBT) containing two NPN silicon epitaxial transistors in an ultra super mini US6 package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW. The device features a typical DC current gain of 120 at 1 mA and a translation frequency of 250 MHz. The built-in base resistor R1 has a nominal value of 4.7 kΩ.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors into a single compact surface-mount package
• Reduces printed circuit board space requirements and simplifies assembly processes by eliminating external bias components
• Designed for switching, inverter, interface, and driver circuits

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba Semiconductor and Storage documentation to confirm packaging details and reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the intended application does not fall under restricted categories such as aerospace or life-support systems.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Verify that the 4.7 kΩ internal resistance aligns with the target circuit's drive requirements. Consider the 200 mW total power dissipation limit and ensure adequate thermal management within the US6 package constraints.

Part Context

This part belongs to the RN1970/RN1971 series of Bias Resistor Built-in Transistors manufactured by Toshiba Electronic Devices & Storage Corporation. It serves as a complementary counterpart to the PNP variants RN2970 and RN2971. The product utilizes Toshiba's PCT process technology for silicon NPN epitaxial transistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing with other manufacturers requires independent verification of pinout compatibility, electrical characteristics, and package dimensions.