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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.1W ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN1971FE(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors into an Extreme-Super-Mini 6-pin package, featuring a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device includes a typical input resistor (R1) of 10 kΩ per transistor. Electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = 1 mA, a transition frequency (fT) of 250 MHz, and a maximum collector power dissipation (PC) of 100 mW. The operating junction temperature range extends from -55°C to +150°C.
Feature Summary
- Dual NPN configuration with integrated bias resistors reduces component count and assembly costs.
- Compact Extreme-Super-Mini 6-pin package design suitable for space-constrained applications.
- High-speed switching capability supported by a 250 MHz transition frequency.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the requested quantity aligns with manufacturer standard packing quantities to avoid handling discrepancies during procurement processing.
Selection Notes
Select the RN1971FE when a dual NPN digital transistor with a 10 kΩ base resistor is required. Compare its 100 mW power dissipation rating against thermal requirements in high-density layouts. Verify that the 50 V voltage rating meets circuit constraints and that the 100 mA current limit is sufficient for the intended load application.
Part Context
This component belongs to the RN19xx series of Bias Resistor Built-In Transistors (BRBTs). It serves as the NPN counterpart to the PNP RN2971FE model. The part utilizes Toshiba's PCT process technology for silicon epitaxial transistors, designed specifically for general electronics applications requiring compact switching solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching the dual NPN configuration, 50 V rating, 100 mA current, 10 kΩ input resistance, and ESV/US-6 compatible package dimensions.
