RN1971TE85LF

Overview

The RN1971TE85LF is a dual NPN pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors into a compact surface-mount package, designed to reduce component count in circuit designs. The device features a collector-emitter voltage rating of 50V and a maximum collector current of 100mA. Key electrical parameters include a DC current gain (hFE) of at least 120 and a collector cutoff current (ICBO) of 10nA. The unit operates within a temperature range of -40°C to 85°C and is housed in a US6 package.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to minimize external components
• Optimized for switching, inverter, interface, and driver circuits
• Compact Ultra-Super-Mini package design facilitates high-density PCB layouts

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the exact ordering suffix against official Toshiba documentation, as variations such as TE85L,F may indicate specific tape-and-reel packaging configurations. Confirm RoHS compliance status and moisture sensitivity level prior to procurement to ensure compatibility with assembly processes.

Selection Notes

Select this component when space constraints require integrated biasing solutions for dual NPN switching applications. Ensure the required hFE meets the minimum threshold of 120 and that the 50V VCEO rating exceeds the maximum circuit voltage. Verify thermal dissipation requirements against the 0.2W power limit.

Part Context

This part belongs to Toshiba's line of Bias Resistor Built-in Transistors (BRTs). These devices are engineered to simplify circuit design by replacing discrete transistors and base resistors with a single packaged solution, thereby reducing assembly costs and board space.

Replacement Considerations

Direct substitutes must match the dual NPN configuration, 50V rating, 100mA current capacity, and US6 package footprint. Verify equivalent hFE and resistor values to ensure functional parity in existing designs.