RN1973(TE85L,F)

Overview

The RN1973(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with a shared 47 kΩ base bias resistor into an Ultra-Super-Mini US-6 package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 200 mW. It features a minimum DC current gain (hFE) of 120 and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates two NPN transistors and a common bias resistor to reduce component count and assembly costs.
• Utilizes a compact US-6 surface-mount package for space-constrained designs.
• Supports high-temperature operation up to 150°C junction temperature.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure RoHS compliance status matches current regulatory requirements for the target market. Cross-reference the manufacturer part number with distributor listings to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a dual NPN configuration with a fixed 47 kΩ shared bias resistor is required. The US-6 package is suitable for applications demanding minimal board space. Verify that the 100 mA collector current and 50 V voltage ratings meet the circuit load requirements. Consider the 200 mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to Toshiba's line of Bias Resistor Built-In Transistors (BRBTs). These devices combine transistors with internal resistors to simplify circuit design. The RN1973 specifically offers a dual NPN configuration in a small form factor, distinguishing it from single-transistor variants or those with different resistance values.

Replacement Considerations

Check for direct equivalents from other manufacturers offering dual NPN BRBTs in US-6 packages with similar 47 kΩ bias resistance. Verify pinout compatibility and electrical parameter alignment, including hFE and voltage ratings, before substitution.

FAQ

What is the value of the integrated bias resistor?

The RN1973(TE85L,F) incorporates a single 47 kΩ bias resistor shared between the two NPN transistors.

What is the maximum collector-emitter voltage?

The absolute maximum rating for collector-emitter voltage (VCEO) is 50 V.

Does this component support high-temperature environments?

Yes, the device is rated for a junction temperature range extending up to +150°C.