RN2502(TE85L,F)

Overview

The RN2502(TE85L,F) is a silicon PNP epitaxial type bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two devices within an SMV (super mini type with 5 leads) package, featuring built-in bias resistors to simplify circuit design and reduce component count. The device supports switching, inverter, interface, and driver circuits. Key electrical parameters include a collector-base voltage of -50 V, collector-emitter voltage of -50 V, and a maximum collector current of -100 mA. The DC current gain (hFE) is specified at a minimum of 50 under test conditions of VCE = -5 V and IC = -10 mA. The transition frequency is typically 200 MHz.

Feature Summary

• Integrates two PNP transistors with built-in bias resistors into a single compact SMV package.
• Simplifies circuit design by reducing the quantity of external parts and manufacturing processes.
• Supports various resistance values to accommodate different circuit design requirements.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status for your region before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to ensure long-term reliability in your specific application environment.

Selection Notes

Select the RN2502 when a dual PNP configuration with equal base and emitter resistors of 10 kΩ is required. This part complements the NPN RN1502 series. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding collector power dissipation and junction temperature limits, to maintain performance stability.

Part Context

The RN2502 belongs to the RN2501-RN2506 family of bias resistor built-in transistors. These components are designed as complementary pairs to the RN1501-RN1506 series, offering both NPN and PNP options. They utilize Toshiba's PCT process technology and are housed in the SMV package, which weighs approximately 14 mg, facilitating high-density PCB layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative manufacturers' dual bias transistors by matching the R1/R2 ratio, hFE, and package dimensions.