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The RN2503(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two devices within an SMV (super mini type with 5 leads) package, designed to simplify circuit design and reduce component quantity. The device features built-in bias resistors with nominal values of R1 = 22 kΩ and R2 = 22 kΩ. Key electrical characteristics include a collector-emitter voltage rating of -50 V, a continuous collector current of -100 mA, and a total power dissipation of 300 mW. The DC current gain (hFE) has a minimum value of 70, and the transition frequency is typically 200 MHz.
Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the selected component meets all environmental and regulatory requirements for the intended application environment.
Select the RN2503(TE85L,F) when a dual PNP configuration with equal 22 kΩ bias resistors is required. Compare its hFE and saturation voltage parameters against alternative models like the RN2501 or RN2504 if different gain levels or resistance ratios are needed. Ensure the operating temperature range and power dissipation limits align with the system's thermal design constraints.
This component belongs to the RN2501 to RN2506 series of silicon PNP epitaxial type transistors utilizing Toshiba's PCT process. These devices are complementary to the NPN RN1501 to RN1506 series. The series is designed for applications requiring miniaturization and simplified circuit layouts through integrated biasing solutions.
RN2501(TE85L,F), RN2502(TE85L,F), RN2504(TE85L,F), RN2505(TE85L,F), RN2506(TE85L,F)