RN2504(TE85L,F)

RN2504(TE85L,F)

$0.31
  • Description:TRANS 2PNP PREBIAS 0.3W SMV
  • Series:-

SKU:2d60c1fe55ec Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

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RN2504(TE85L,F)

Overview

The RN2504(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an SMV (Super Mini Type, 5-lead) surface-mount package. The device features a collector-emitter voltage rating of -50 V and a continuous collector current of -100 mA per channel. Internal resistors R1 and R2 are both 47 kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 80 at -10 mA/-5 V, a transition frequency (fT) of 200 MHz, and a maximum collector power dissipation of 300 mW.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to reduce component count
  • Utilizes compact SMV (5-lead) surface-mount packaging for space-constrained designs
  • Simplifies circuit design by eliminating external base resistors

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm reel specifications and lead-free status. Confirm that the SMV package dimensions align with PCB footprint requirements. Ensure compliance with RoHS directives if required by the target application environment.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required in a minimal footprint. The 47 kΩ resistor values suit applications needing moderate drive currents. Verify that the -50 V rating meets the system voltage requirements and that the 300 mW total power dissipation accommodates thermal constraints.

Part Context

This part belongs to the RN2501 to RN2506 series of PNP epitaxial planar transistors. It serves as the complementary counterpart to the RN1501 to RN1506 NPN series. All devices in this family share the same SMV package and general electrical structure but differ in internal resistance values and polarity.

Replacement Considerations

Direct substitutes within the same series include RN2501, RN2502, RN2503, RN2505, and RN2506. These alternatives offer different bias resistor values while maintaining identical package and voltage ratings. Cross-polarity replacement requires using the corresponding RN1504 model.

RN2504(TE85L,F)RN2504(TE85L,F)
$0.31
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