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The RN2504(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an SMV (Super Mini Type, 5-lead) surface-mount package. The device features a collector-emitter voltage rating of -50 V and a continuous collector current of -100 mA per channel. Internal resistors R1 and R2 are both 47 kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 80 at -10 mA/-5 V, a transition frequency (fT) of 200 MHz, and a maximum collector power dissipation of 300 mW.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm reel specifications and lead-free status. Confirm that the SMV package dimensions align with PCB footprint requirements. Ensure compliance with RoHS directives if required by the target application environment.
Select this component when a dual PNP configuration with integrated biasing is required in a minimal footprint. The 47 kΩ resistor values suit applications needing moderate drive currents. Verify that the -50 V rating meets the system voltage requirements and that the 300 mW total power dissipation accommodates thermal constraints.
This part belongs to the RN2501 to RN2506 series of PNP epitaxial planar transistors. It serves as the complementary counterpart to the RN1501 to RN1506 NPN series. All devices in this family share the same SMV package and general electrical structure but differ in internal resistance values and polarity.
Direct substitutes within the same series include RN2501, RN2502, RN2503, RN2505, and RN2506. These alternatives offer different bias resistor values while maintaining identical package and voltage ratings. Cross-polarity replacement requires using the corresponding RN1504 model.