RN2505TE85LF

Overview

The RN2505TE85LF is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an SMV (Super Mini Type, 5-lead) surface-mount package. The device features a collector-emitter voltage rating of -50 V and a continuous collector current capacity of -100 mA per transistor. Internal resistance values are fixed at R1 = 2.2 kΩ and R2 = 47 kΩ, yielding a typical resistance ratio of 0.0468. Key electrical characteristics include a minimum DC current gain (hFE) of 80, a transition frequency (fT) of 200 MHz, and a maximum power dissipation of 300 mW.

Feature Summary

• Integrates two PNP transistors with pre-biased resistors in a compact five-lead SMV package to reduce component count and simplify circuit design.
• Provides high-speed switching performance with a transition frequency of 200 MHz and low saturation voltage for efficient driver applications.
• Offers flexible input impedance options through specific internal resistor configurations suitable for various interface and logic driving requirements.

Applications

• Switching circuits requiring compact dual-transistor solutions
• Inverter circuits for digital logic interfacing
• Driver circuits for low-power loads

Procurement Notes

Verify the complete part number including the ordering suffix TE85L,F against official Toshiba documentation to ensure correct packaging and material specifications. Confirm RoHS compliance status and environmental declarations prior to procurement. Ensure that the selected variant matches the required lead-free and halogen-free standards mandated by the target application's regulatory framework.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required in a minimal footprint. The specific 2.2 kΩ / 47 kΩ resistor ratio suits applications needing lower base drive currents compared to standard 1:1 ratio devices. Verify that the -50 V voltage rating and -100 mA current limits align with the operational parameters of the target load and supply rails.

Part Context

This component belongs to the RN2501 to RN2506 series of silicon PNP epitaxial type BRTs utilizing Toshiba's PCT process. These devices are designed as complementary counterparts to the NPN RN1501 to RN1506 series. The RN2505 specifically provides a unique asymmetric resistor ratio distinct from the symmetric ratios found in other members of the family.

Replacement Considerations

FMA5AT148 is documented as a similar replacement option by Rohm Semiconductor. Verify pinout compatibility and electrical parameter alignment before substitution.