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The RN2506(TE85L,F) is a dual PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in an SMV package. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 300 mW. The device features an input resistance (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ, resulting in a resistance ratio of 0.1. It exhibits a DC current gain (hFE) of at least 80 and a transition frequency of 200 MHz.
Verify the exact ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Confirm that the SMV package dimensions and marking codes match your PCB layout requirements. Ensure environmental compliance aligns with target market regulations before finalizing procurement specifications.
Select this component when a dual PNP configuration with integrated biasing is required. The 4.7 kΩ input resistor and 47 kΩ emitter resistor provide a specific drive characteristic. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements of the intended switching or driving application.
This part belongs to the RN2501 through RN2506 series of PNP BRTs. These devices are designed as complementary counterparts to the NPN RN1501 through RN1506 series. They share the same SMV package form factor but utilize different internal transistor polarities and resistor networks tailored for specific logic levels.
No direct public substitute part numbers are confirmed in the provided source material.