RN2506(TE85L,F)

RN2506(TE85L,F)

$0.26
  • Description:TRANS 2PNP PREBIAS 0.3W SMV
  • Series:-

SKU:48bc262e4e0f Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

Download product information

RN2506(TE85L,F)

Overview

The RN2506(TE85L,F) is a dual PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in an SMV package. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 300 mW. The device features an input resistance (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ, resulting in a resistance ratio of 0.1. It exhibits a DC current gain (hFE) of at least 80 and a transition frequency of 200 MHz.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and manufacturing process steps for equipment miniaturization
  • Provides specific resistance values suitable for various interface and driver circuits

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the exact ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Confirm that the SMV package dimensions and marking codes match your PCB layout requirements. Ensure environmental compliance aligns with target market regulations before finalizing procurement specifications.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required. The 4.7 kΩ input resistor and 47 kΩ emitter resistor provide a specific drive characteristic. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements of the intended switching or driving application.

Part Context

This part belongs to the RN2501 through RN2506 series of PNP BRTs. These devices are designed as complementary counterparts to the NPN RN1501 through RN1506 series. They share the same SMV package form factor but utilize different internal transistor polarities and resistor networks tailored for specific logic levels.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided source material.

RN2506(TE85L,F)RN2506(TE85L,F)
$0.26
Buy Now